DIA7.0xT0.5mm Sapphire Crystal Substrate(C-plane)

This batch of Japanese-sourced high-purity Sapphire Crystal Wafers features excellent flatness and surface roughness for the most demanding of applications (such as Electron-Beam Lithography and Cr Deposition).

P/N: SPS-R-0070-0050F-C

Substrate Material:Sapphire Crystal. C-cut/C-plane
Outer Diameter:Dia 7.0,-0.1/+0mm
Thickness:0.500,+/-0.015mm
Surface Quality:10-5 S/D, double-side polished(DSP)
Flatness:< Lambda/10 @ 633nm over DIA7.0mm surface specially processed
Parallelism:<30 arc seconds
Roughness:Ra<10A RMS
Orientation:C-plane surface
Chamfer:Unbevelled; Edge surface ground
MOQ:MOQ 50pcs(minimum order quantity) ;
Packing 1010T1 P-box/vacuum packed